STPSC31H12C-Y

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 TO-247

2 X 15 A, 1200 V power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Package
TO-247
Datasheet
9 pages · 212 KB

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STPSC31H12C-Y Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
封装TO-247

Technical Documents

1 document

Datasheet

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