“7” 共 407 个型号· 2461 ms

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  • ESDA5V3LY车规级AEC-Q101

    Microsoft Word - ESDALY_9b036a99-7cc6-4a3f-ad6b-e5f674d13ba7.docm

    厂商 意法半导体封装 SOT23封装 SOT23
    1 份文档
  • GWA75H65DRFB2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • RHFL7913A军工/航天级QML-VRHA

    Rad-hard adjustable negative voltage regulator

    厂商 意法半导体
    1 份文档
  • SCT011H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT011HU75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT012H90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT016H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 112 A
    1 份文档
  • SCT018H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT020H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档
  • SCT020H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 22 mΩ typ., 85 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 85 A
    1 份文档
  • SCT025H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 55 A
    1 份文档
  • SCT027H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT027HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT027W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT029H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 29 mΩ typ., 60 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 60 A
    1 份文档
  • SCT040H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 40 A
    1 份文档
  • SCT040H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 30 A
    1 份文档
  • SCT040H65G3SAG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package

    厂商 意法半导体VDS 650 VID 30 A
    1 份文档
  • SCT045W17KAG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mΩ typ., 48 A in an HiP247 package

    厂商 意法半导体VDS 1700 VID 48 A
    1 份文档
  • SCT055H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 30 A
    1 份文档