SCT040H65G3SAG

量产SiC / GaN 宽禁带器件VDS 650 VID 30 ARDS(on) 40 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package

SCT040H65G3SAG 主要参数

来源：原厂数据手册

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SCT040H65G3-7Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
SCT040H65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
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M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
SCT011HU75G3AGAutomotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package
SCT025W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package
SCT040W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
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SCT040H65G3SCT040H65G3SSCT040H65G3SA