SCT029H75G3AG

量产SiC / GaN 宽禁带器件VDS 750 VID 60 ARDS(on) 29 mΩ

Automotive-grade silicon carbide Power MOSFET 750 V, 29 mΩ typ., 60 A in an H²PAK-7 package

SCT029H75G3AG 主要参数

来源：原厂数据手册

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SCT029H75G3SCT029H75G3A