STPSC8H065-Y
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 650 VID 8 A封装 DPAK
Automotive 650 V, 8 A high surge silicon carbide power Schottky diode
- Manufacturer
- STMicroelectronics
- Package
- DPAK
- Datasheet
- 12 pages · 607 KB
- Website
- www.st.com
STPSC8H065-Y Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|---|
| VDS | 650 V |
| ID | 8 A |
| 封装 | DPAK |
Technical Documents
1 documentDatasheet
Alternatives
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