STPSC8H065DLF
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 POWERFLAT8X8
650 V power Schottky silicon carbide diode
- Manufacturer
- STMicroelectronics
- Package
- POWERFLAT8X8
- Datasheet
- 12 pages · 377 KB
- Website
- www.st.com
STPSC8H065DLF Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|---|
| 封装 | POWERFLAT8X8 |
Technical Documents
1 documentDatasheet
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