Skip to main content

SCT070H120G3-7

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 30 ARDS(on) 63 mΩ

Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 671 KB
Website: www.st.com

Wrong information or a copyright issue? Let us know

SCT070H120G3-7 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	30 A
RDS(on)	63 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT070H120G3-7 - Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
14 pages671 KB BookmarkedST-SCT070H120G37.pdf

Alternatives

0 parts

No alternatives listed for SCT070H120G3-7 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

SCT070H120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

More from STMicroelectronics

GANSPIN611High-voltage half-bridge GaN motor driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG212220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG610High voltage and high-speed half-bridge gate driver for GaN power switches
STDRIVEG611High voltage and high-speed half-bridge gate driver for GaN power switches
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN6650 V GaN half-bridge with gate driver and protections
SCT018HU65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package