Skip to main content

SCT027H65G3AG

ActiveSiC / GaN Wide-BandgapVDS 650 VID 60 ARDS(on) 29 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 387 KB
Website: www.st.com

Wrong information or a copyright issue? Let us know

SCT027H65G3AG Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	60 A
RDS(on)	29 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT027H65G3AG - Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package
14 pages387 KB BookmarkedST-SCT027H65G3AG.pdf

Alternatives

0 parts

No alternatives listed for SCT027H65G3AG yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from STMicroelectronics

GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
SCT011HU75G3AGAutomotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package
SCT025W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package
SCT040W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG212220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG600High voltage half-bridge gate driver for GaN transistors

Order codes / Aliases

SCT027H65G3SCT027H65G3A