“U” 共 779 个型号· 2532 ms

  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 650 V, 42 mohm

    厂商 安森美封装 TO-263-7RDS(on) 42 mΩ封装 TO-263-7
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 8.6 mohm

    厂商 安森美封装 TO247RDS(on) 8.6 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 16 mohm

    厂商 安森美封装 TO247-3RDS(on) 16 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 16 mohm

    厂商 安森美封装 TO247RDS(on) 16 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 35 mohm

    厂商 安森美封装 TO-263-7RDS(on) 35 mΩ封装 TO-263-7
    1 份文档
  • Fast Rectifiers

    厂商 安森美
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 53 mohm

    厂商 安森美封装 TO-263-7RDS(on) 53 mΩ封装 TO-263-7
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 53 mohm

    厂商 安森美封装 TO247-3RDS(on) 53 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 53 mohm

    厂商 安森美封装 TO247RDS(on) 53 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 72 mohm

    厂商 安森美封装 TO-263-7RDS(on) 72 mΩ封装 TO-263-7
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 72 mohm

    厂商 安森美封装 TO247-3RDS(on) 72 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4,1200 V, 72 mohm

    厂商 安森美封装 TO247RDS(on) 72 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-4LH, 1200 V, 9.1 mohm

    厂商 安森美封装 TO247RDS(on) 9.1 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4LH, 1200 V, 12 mohm

    厂商 安森美封装 TO247RDS(on) 12 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 23 mohm

    厂商 安森美封装 TO-263-7RDS(on) 23 mΩ封装 TO-263-7
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 23 mohm

    厂商 安森美封装 TO247RDS(on) 23 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 30 mohm

    厂商 安森美封装 D2PAKRDS(on) 30 mΩ封装 D2PAK
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 30 mohm

    厂商 安森美封装 TO247RDS(on) 30 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET Module – EliteSiC, Full‐Bridge Module, 1200 V, 35 mohm

    厂商 安森美RDS(on) 35 mΩ
    1 份文档
  • Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 8.8 mohm

    厂商 安森美封装 TO247RDS(on) 8.8 mΩ封装 TO247
    1 份文档