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SCT025W120G3-4

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 56 ARDS(on) 27 mΩ

Silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 499 KB
Website: www.st.com

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SCT025W120G3-4 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	56 A
RDS(on)	27 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT025W120G3-4 - Silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package
12 pages499 KB BookmarkedST-SCT025W120G34.pdf

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Same Series

SCT025W120G3-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package
SCT025W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package

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