UJ3C065030T3S

ActiveSiC / GaN Wide-BandgapRDS(on) 27 mΩ封装 TO220

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO220‐3, 650 V, 27 mohm

Manufacturer
onsemi
Package
TO220
Datasheet
12 pages · 469 KB

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UJ3C065030T3S Key Specifications

Source: manufacturer datasheet
RDS(on)27 mΩ
封装TO220

Technical Documents

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