UF3C120400B7S

ActiveSiC / GaN Wide-BandgapRDS(on) 410 mΩ封装 TO-263-7

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 410 mohm

Manufacturer
onsemi
Package
TO-263-7
Datasheet
12 pages · 566 KB

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UF3C120400B7S Key Specifications

Source: manufacturer datasheet
RDS(on)410 mΩ
封装TO-263-7

Technical Documents

1 document

Datasheet

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