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NVHL080N120SC1

ActiveSiC / GaN Wide-BandgapRDS(on) 80 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L

Manufacturer: onsemi
Package: TO-247
Datasheet: 7 pages · 361 KB
Website: www.onsemi.com

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NVHL080N120SC1 Key Specifications

Source: manufacturer datasheet

RDS(on)	80 mΩ
封装	TO-247

Technical Documents

1 document

Datasheet

NVHL080N120SC1 - Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L
7 pages361 KBONSEMI-NVHL080N120SC1.pdf

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NVHL080N120SC1ASilicon Carbide (SiC) MOSFET – 80 mohm, 1200 V M1, TO-247-3L

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