NTH4L160N120SC1

UnknownSiC / GaN Wide-BandgapRDS(on) 160 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

Manufacturer
onsemi
Package
TO-247
Datasheet
8 pages · 327 KB · Rev. 5

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NTH4L160N120SC1 Key Specifications

Source: manufacturer datasheet
RDS(on)160 mΩ
封装TO-247

Technical Documents

1 document

Datasheet

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