NTH4LN022N120M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 19 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 1200 V, M3S, TO‐247‐4L, Thin Leads

Manufacturer
onsemi
Package
TO-247
Datasheet
9 pages · 401 KB

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NTH4LN022N120M3S Key Specifications

Source: manufacturer datasheet
RDS(on)19 mΩ
封装TO-247

Technical Documents

1 document

Datasheet

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