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NTH4LN030N120M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 24 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET - EliteSiC, 24 mohm, 1200 V, M3S, TO‐247‐4L, Thin Leads

Manufacturer: onsemi
Package: TO-247
Datasheet: 9 pages · 402 KB
Website: www.onsemi.com

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NTH4LN030N120M3S Key Specifications

Source: manufacturer datasheet

RDS(on)	24 mΩ
封装	TO-247

Technical Documents

1 document

Datasheet

NTH4LN030N120M3S - Silicon Carbide (SiC) MOSFET - EliteSiC, 24 mohm, 1200 V, M3S, TO‐247‐4L, Thin Leads
9 pages402 KBONSEMI-NTH4LN030N120M3S.pdf

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Order codes / Aliases

NTH4LN030N120M3