NTHL016N065M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 16.8 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – EliteSiC, 16.8 mohm, 650 V, M3S, TO‐247‐3L

Manufacturer
onsemi
Package
TO-247
Datasheet
12 pages · 607 KB

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NTHL016N065M3S Key Specifications

Source: manufacturer datasheet
RDS(on)16.8 mΩ
封装TO-247

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