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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package
厂商 意法半导体1 份文档Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package
厂商 意法半导体1 份文档Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package
厂商 意法半导体1 份文档- 1 份文档
Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package
厂商 意法半导体1 份文档Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package
厂商 意法半导体1 份文档- 1 份文档