“J” 共 96 个型号· 472 ms

排序相关度热度型号 A-Z
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  • UJ3C120150K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 150 mohm

    厂商 安森美封装 TO247-3RDS(on) 150 mΩ封装 TO247-3
    1 份文档
  • UJ3D06520KSD

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 20 A, 650 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D06560KSD

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 60 A, 650 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1210K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1210KS

    Silicon Carbide (SiC) Diodes - EliteSiC, TO247-3, 10 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode

    厂商 安森美封装 TO247-3封装 TO247-3
    1 份文档
  • UJ3D1210KSD

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1220K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1220KSD

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1250K

    Silicon Carbide (SiC) Diode - EliteSiC, TO247-3, 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode

    厂商 安森美封装 TO247-3封装 TO247-3
    1 份文档
  • UJ3D1250K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 50 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1725K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 25 A, 1700 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3N065025K3S

    Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 650 V, 25 mohm

    厂商 安森美封装 TO247RDS(on) 25 mΩ封装 TO247
    1 份文档
  • UJ3N065080K3S

    Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 80 mohm

    厂商 安森美封装 TO247-3RDS(on) 80 mΩ封装 TO247-3
    1 份文档
  • UJ3N120035K3S

    Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 35 mohm

    厂商 安森美封装 TO247RDS(on) 35 mΩ封装 TO247
    1 份文档
  • UJ3N120065K3S

    Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 66 mohm

    厂商 安森美封装 TO247RDS(on) 66 mΩ封装 TO247
    1 份文档
  • UJ3N120070K3S

    Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 70 mohm

    厂商 安森美封装 TO247RDS(on) 70 mΩ封装 TO247
    1 份文档
  • UJ4C075018K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐3, 750 V, 18 mohm

    厂商 安森美封装 TO247RDS(on) 18 mΩ封装 TO247
    1 份文档
  • UJ4C075018K4S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-4, 750 V, 18 mohm

    厂商 安森美封装 TO247-4RDS(on) 18 mΩ封装 TO247-4
    1 份文档
  • UJ4C075023K3S

    Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐3, 750 V, 23 mohm

    厂商 安森美封装 TO247RDS(on) 23 mΩ封装 TO247
    1 份文档
  • UJ4C075023K4S

    Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247-4, 750 V, 23 mohm

    厂商 安森美封装 TO247-4RDS(on) 23 mΩ封装 TO247-4
    1 份文档