UJ3D06560KSD

Name: UJ3D06560KSD
Brand: onsemi

量产SiC / GaN 宽禁带器件封装 TO247

Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 60 A, 650 V SiC Merged PiN‐Schottky (MPS) Diode

UJ3D06560KSD 主要参数

来源：原厂数据手册

封装	TO247

1 份文档

0 个

暂未收录 UJ3D06560KSD 的替代料信息。

价格与库存以渠道为准

暂无

NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
NDSH20120CSilicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L
NDSH25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L
NDSH50120C-F155Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L
NVBG060N090SC1Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L
NVH4L040N120SC1Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L
NVT2012N065M3SSilicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK
NVT2016N065M3SSilicon Carbide (SiC) MOSFET
NVXK2VR80WDT2SiC Power MOSFET Module
UF3C065080B7SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 650 V, 85 mohm
UF3C065080T3SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm
UF3C120150B7SSilicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm

UJ3D06560UJ3D06560KUJ3D06560KS