“J” 共 414 个型号· 78 ms

  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 70 mohm

    厂商 安森美封装 TO247-3RDS(on) 70 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 70 mohm

    厂商 安森美封装 TO247RDS(on) 70 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80 mohm

    厂商 安森美封装 TO247-3RDS(on) 80 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 150 mohm

    厂商 安森美封装 TO247-3RDS(on) 150 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 20 A, 650 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 60 A, 650 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diodes - EliteSiC, TO247-3, 10 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode

    厂商 安森美封装 TO247-3封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diode - EliteSiC, TO247-3, 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode

    厂商 安森美封装 TO247-3封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 50 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 25 A, 1700 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 650 V, 25 mohm

    厂商 安森美封装 TO247RDS(on) 25 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 80 mohm

    厂商 安森美封装 TO247-3RDS(on) 80 mΩ封装 TO247-3
    1 份文档
  • Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 35 mohm

    厂商 安森美封装 TO247RDS(on) 35 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 66 mohm

    厂商 安森美封装 TO247RDS(on) 66 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 70 mohm

    厂商 安森美封装 TO247RDS(on) 70 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐3, 750 V, 18 mohm

    厂商 安森美封装 TO247RDS(on) 18 mΩ封装 TO247
    1 份文档