STPSC30H12C

Name: STPSC30H12C
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -40 ~ 175 °C封装 TO-247

1200 V power Schottky silicon carbide diode

STPSC30H12C 主要参数

来源：原厂数据手册

工作温度	-40 ~ 175 °C
封装	TO-247

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