STPSC2H065-Y

Name: STPSC2H065-Y
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -40 ~ 175 °CVDS 650 VID 2 A

Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

STPSC2H065-Y 主要参数

来源：原厂数据手册

1 份文档

0 个

暂未收录 STPSC2H065-Y 的替代料信息。

价格与库存以渠道为准

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
SCT011HU75G3AGAutomotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package
SCT025W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package
SCT040W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches

STPSC2H065