SCT10N120AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 12 ARDS(on) 520 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package -

SCT10N120AG 主要参数

来源：原厂数据手册

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SCT10N120Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
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A2U12M12W2-F1CACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN1L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN6650 V GaN half-bridge with gate driver and protections

SCT10N120SCT10N120A