SCT10N120

Name: SCT10N120
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 1200 VID 12 ARDS(on) 500 mΩ

Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package

SCT10N120 主要参数

来源：原厂数据手册

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SCT1000N170Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package
SCT1000N170AGAutomotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package
SCT10N120AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package -

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