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SCT055H65G3-7

ActiveSiC / GaN Wide-BandgapVDS 650 VID 30 ARDS(on) 58 mΩ

Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 501 KB
Website: www.st.com

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SCT055H65G3-7 Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	30 A
RDS(on)	58 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT055H65G3-7 - Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package
14 pages501 KB BookmarkedST-SCT055H65G37.pdf

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Same Series

SCT055H65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package

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