SCT040H65G3SAG

ActiveSiC / GaN Wide-BandgapVDS 650 VID 30 ARDS(on) 40 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package

SCT040H65G3SAG Key Specifications

Source: manufacturer datasheet

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SCT040H65G3-7Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
SCT040H65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package

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