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SCT040H120G3-7

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 40 ARDS(on) 40 mΩ

Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 677 KB
Website: www.st.com

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SCT040H120G3-7 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	40 A
RDS(on)	40 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT040H120G3-7 - Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14 pages677 KB BookmarkedST-SCT040H120G37.pdf

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Same Series

SCT040H120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

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