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SCT027W65G3-4AG

ActiveSiC / GaN Wide-BandgapVDS 650 VID 60 ARDS(on) 29 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 485 KB
Website: www.st.com

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SCT027W65G3-4AG Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	60 A
RDS(on)	29 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT027W65G3-4AG - Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package
12 pages485 KB BookmarkedST-SCT027W65G34AG.pdf

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Order codes / Aliases

SCT027W65G34SCT027W65G34A