SCT019W120G3-4AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 90 ARDS(on) 19.2 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HiP247-4 package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 509 KB

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SCT019W120G3-4AG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID90 A
RDS(on)19.2 mΩ

Technical Documents

1 document

Datasheet

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