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SCT016H120G3AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 112 ARDS(on) 16 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 661 KB
Website: www.st.com

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SCT016H120G3AG Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	112 A
RDS(on)	16 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT016H120G3AG - Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package
14 pages661 KB BookmarkedST-SCT016H120G3AG.pdf

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Order codes / Aliases

SCT016H120G3SCT016H120G3A