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UJ4N075004L8S

ActiveSiC / GaN Wide-BandgapRDS(on) 4.3 mΩ

Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, H-PDSO-F8, 750 V, 4.3 mohm

Manufacturer: onsemi
Datasheet: 8 pages · 715 KB
Website: www.onsemi.com

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UJ4N075004L8S Key Specifications

Source: manufacturer datasheet

RDS(on)	4.3 mΩ

Technical Documents

1 document

Datasheet

UJ4N075004L8S - Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, H-PDSO-F8, 750 V, 4.3 mohm
8 pages715 KBONSEMI-UJ4N075004L8S.pdf

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Same Series

UJ4N075005K4SSilicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 4.8 mohm

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Order codes / Aliases

UJ4N075004L8