UJ4N075005K4S
ActiveSiC / GaN Wide-BandgapRDS(on) 4.8 mΩ封装 TO247
Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 4.8 mohm
- Manufacturer
- onsemi
- Package
- TO247
- Datasheet
- 9 pages · 423 KB
- Website
- www.onsemi.com
UJ4N075005K4S Key Specifications
Source: manufacturer datasheet| RDS(on) | 4.8 mΩ |
|---|---|
| 封装 | TO247 |
Technical Documents
1 documentDatasheet
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