UJ3D1210KSD

ActiveSiC / GaN Wide-Bandgap封装 TO247

Silicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode

UJ3D1210KSD Key Specifications

Source: manufacturer datasheet

封装	TO247

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UJ3D1210K2Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode
UJ3D1210KSSilicon Carbide (SiC) Diodes - EliteSiC, TO247-3, 10 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode

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