UJ3D1210KS

Name: UJ3D1210KS
Brand: onsemi

ActiveSiC / GaN Wide-Bandgap封装 TO247-3

Silicon Carbide (SiC) Diodes - EliteSiC, TO247-3, 10 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode

UJ3D1210KS Key Specifications

Source: manufacturer datasheet

封装	TO247-3

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UJ3D1210K2Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode
UJ3D1210KSDSilicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode
UJ3D1220K2Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode
UJ3D1220KSDSilicon Carbide (SiC) Diode – EliteSiC, TO247‐3, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Dual Diode
UJ3D1250KSilicon Carbide (SiC) Diode - EliteSiC, TO247-3, 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode
UJ3D1250K2Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 50 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

UJ3D1210UJ3D1210K