Skip to main content

NTC160N120SC1

UnknownSiC / GaN Wide-BandgapRDS(on) 160 mΩ

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, Bare Die

Manufacturer: onsemi
Datasheet: 8 pages · 169 KB · Rev. 1
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NTC160N120SC1 Key Specifications

Source: manufacturer datasheet

RDS(on)	160 mΩ

Technical Documents

1 document

Datasheet

NTC160N120SC1 - Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, Bare Die
8 pages169 KBRev. 12022-04-01ONSEMI-NTC160N120SC1.pdf

Alternatives

0 parts

No alternatives listed for NTC160N120SC1 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from onsemi

NTCR013N120M3S-DIESilicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die
NTCR040N120M3S-DIESilicon Carbide (SiC) MOSFET
NTD100N70GN1Enhancement Mode Gallium Nitride (GaN) HEMT 700 V, 75 mΩ, 21 A, PDSO‐E3 (DPAK)
NTD170N70GN1Enhancement Mode Gallium Nitride (GaN) HEMT 700 V, 132 mΩ, 12 A, PDSO‐E3 (DPAK)
NTH4L012N065M3SSilicon Carbide (SiC) MOSFET
NTH4L013N120M3SSilicon Carbide (SiC) MOSFET
NTH4L014N120M3PSilicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L015N065SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
NTH4L016N065M3SSilicon Carbide (SiC) MOSFET
NTH4L018N075SC1Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750 V, M2, TO-247-4L
NTH4L020N090SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
NTH4L020N120SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L