Skip to main content

NTCR013N120M3S-DIE

ActiveSiC / GaN Wide-BandgapRDS(on) 13 mΩ

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

Manufacturer: onsemi
Datasheet: 8 pages · 442 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NTCR013N120M3S-DIE Key Specifications

Source: manufacturer datasheet

RDS(on)	13 mΩ

Technical Documents

1 document

Datasheet

NTCR013N120M3S-DIE - Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die
8 pages442 KBONSEMI-NTCR013N120M3SDIE.pdf

Alternatives

0 parts

No alternatives listed for NTCR013N120M3S-DIE yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from onsemi

NTCR040N120M3S-DIESilicon Carbide (SiC) MOSFET
NTD100N70GN1Enhancement Mode Gallium Nitride (GaN) HEMT 700 V, 75 mΩ, 21 A, PDSO‐E3 (DPAK)
NTD170N70GN1Enhancement Mode Gallium Nitride (GaN) HEMT 700 V, 132 mΩ, 12 A, PDSO‐E3 (DPAK)
NTH4L012N065M3SSilicon Carbide (SiC) MOSFET
NTH4L013N120M3SSilicon Carbide (SiC) MOSFET
NTH4L014N120M3PSilicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L015N065SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
NTH4L016N065M3SSilicon Carbide (SiC) MOSFET
NTH4L018N075SC1Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750 V, M2, TO-247-4L
NTH4L020N090SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
NTH4L020N120SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
NTH4L022N120M3SSilicon Carbide (SiC) MOSFET

Order codes / Aliases

NTCR013N120M3NTCR013N120M3SNTCR013N120M3SDNTCR013N120M3SDI