NTH4L014N120M3P

ActiveSiC / GaN Wide-BandgapRDS(on) 14 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L

Manufacturer
onsemi
Package
TO-247
Datasheet
8 pages · 566 KB

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NTH4L014N120M3P Key Specifications

Source: manufacturer datasheet
RDS(on)14 mΩ
封装TO-247

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