MC33GD3100

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C

Advanced IGBT/SiC gate driver, short data sheet

Manufacturer
NXP
Datasheet
21 pages · 475 KB

Wrong information or a copyright issue? Let us know

MC33GD3100 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 125 °C

Technical Documents

1 document

Datasheet

Alternatives

0 parts
No alternatives listed for MC33GD3100 yet.