A2G22S160-01S

ActiveSiC / GaN Wide-Bandgap

1800–2200 MHz, 32 W AVG., 48 V Airfast RF Power GaN Transistor Data Sheet

Manufacturer
NXP
Datasheet
18 pages · 756 KB

Wrong information or a copyright issue? Let us know

Technical Documents

1 document

Datasheet

Alternatives

0 parts
No alternatives listed for A2G22S160-01S yet.