GD3160

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C

Advanced IGBT/SiC gate driver

Manufacturer
NXP
Datasheet
115 pages · 1.7 MB

Wrong information or a copyright issue? Let us know

GD3160 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 125 °C

Technical Documents

1 document

Datasheet

Alternatives

0 parts
No alternatives listed for GD3160 yet.