“2” 共 173 个型号· 180 ms

排序相关度热度型号 A-Z
安森美 TO 清除筛选
  • NVH4L020N090SC1

    Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 20 mΩ封装 TO-247
    1 份文档
  • NVH4L020N120SC1

    Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 20 mΩ封装 TO-247
    1 份文档
  • NVH4L022N120M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 22 mΩ封装 TO-247
    1 份文档
  • NVHL020N090SC1

    Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L

    厂商 安森美封装 TO-247RDS(on) 20 mΩ封装 TO-247
    1 份文档
  • NVHL020N120SC1

    Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, TO-247-3L

    厂商 安森美封装 TO-247RDS(on) 20 mΩ封装 TO-247
    1 份文档
  • PN200A

    / MMBT200 — PNP General-Purpose Amplifier

    厂商 安森美封装 TO-92封装 TO-92
    1 份文档
  • PN2907A

    Preferred Device

    厂商 安森美封装 TO-92封装 TO-92
    1 份文档
  • NTHL012N065M3S

    Silicon Carbide (SiC) MOSFET - EliteSiC, 12.2 mohm, 650 V, M3S, TO-247-3L

    厂商 安森美封装 TO-247RDS(on) 12.2 mΩ封装 TO-247
    1 份文档
  • UJ3D1210K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 10 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1220K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 20 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1250K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 50 A, 1200 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • UJ3D1725K2

    Silicon Carbide (SiC) Diode – EliteSiC, TO247‐2, 25 A, 1700 V SiC Merged PiN‐Schottky (MPS) Diode

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • NDSH20120C

    Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • NDSH20120C-F155

    Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • NDSH20120CDN

    Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • NDSH25170A

    Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • NTH4L020N090SC1

    Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 20 mΩ封装 TO-247
    1 份文档
  • NTH4L020N120SC1

    Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 20 mΩ封装 TO-247
    1 份文档
  • NTH4L028N170M1

    Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 28 mΩ封装 TO-247
    1 份文档
  • NTH4LN030N120M3S

    Silicon Carbide (SiC) MOSFET - EliteSiC, 24 mohm, 1200 V, M3S, TO‐247‐4L, Thin Leads

    厂商 安森美封装 TO-247RDS(on) 24 mΩ封装 TO-247
    1 份文档