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UJ3N120035K3S

ActiveSiC / GaN Wide-BandgapRDS(on) 35 mΩ封装 TO247

Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 35 mohm

Manufacturer: onsemi
Package: TO247
Datasheet: 10 pages · 519 KB
Website: www.onsemi.com

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UJ3N120035K3S Key Specifications

Source: manufacturer datasheet

RDS(on)	35 mΩ
封装	TO247

Technical Documents

1 document

Datasheet

UJ3N120035K3S - Silicon Carbide (SiC) JFET – EliteSiC, Power N‐Channel, TO247‐3, 1200 V, 35 mohm
10 pages519 KBONSEMI-UJ3N120035K3S.pdf

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Order codes / Aliases

UJ3N120035K3