UG3SC120009K4S

ActiveSiC / GaN Wide-BandgapRDS(on) 8.8 mΩ封装 TO247

Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 8.8 mohm

Manufacturer
onsemi
Package
TO247
Datasheet
13 pages · 674 KB

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UG3SC120009K4S Key Specifications

Source: manufacturer datasheet
RDS(on)8.8 mΩ
封装TO247

Technical Documents

1 document

Datasheet

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