UF4SC120012K4SH

ActiveSiC / GaN Wide-BandgapRDS(on) 12 mΩ封装 TO247

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4LH, 1200 V, 12 mohm

Manufacturer
onsemi
Package
TO247
Datasheet
14 pages · 547 KB

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UF4SC120012K4SH Key Specifications

Source: manufacturer datasheet
RDS(on)12 mΩ
封装TO247

Technical Documents

1 document

Datasheet

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