UF4SC120009K4SH

ActiveSiC / GaN Wide-BandgapRDS(on) 9.1 mΩ封装 TO247

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-4LH, 1200 V, 9.1 mohm

Manufacturer
onsemi
Package
TO247
Datasheet
12 pages · 560 KB

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UF4SC120009K4SH Key Specifications

Source: manufacturer datasheet
RDS(on)9.1 mΩ
封装TO247

Technical Documents

1 document

Datasheet

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