UF4C120053K3S

ActiveSiC / GaN Wide-BandgapRDS(on) 53 mΩ封装 TO247-3

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 53 mohm

Manufacturer
onsemi
Package
TO247-3
Datasheet
11 pages · 541 KB

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UF4C120053K3S Key Specifications

Source: manufacturer datasheet
RDS(on)53 mΩ
封装TO247-3

Technical Documents

1 document

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