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NVH4L060N090SC1

ActiveSiC / GaN Wide-BandgapRDS(on) 60 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, TO-247-4L

Manufacturer: onsemi
Package: TO-247
Datasheet: 7 pages · 892 KB
Website: www.onsemi.com

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NVH4L060N090SC1 Key Specifications

Source: manufacturer datasheet

RDS(on)	60 mΩ
封装	TO-247

Technical Documents

1 document

Datasheet

NVH4L060N090SC1 - Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, TO-247-4L
7 pages892 KBONSEMI-NVH4L060N090SC1.pdf

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