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NVH4L022N120M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 22 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L

Manufacturer: onsemi
Package: TO-247
Datasheet: 8 pages · 406 KB
Website: www.onsemi.com

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NVH4L022N120M3S Key Specifications

Source: manufacturer datasheet

RDS(on)	22 mΩ
封装	TO-247

Technical Documents

1 document

Datasheet

NVH4L022N120M3S - Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L
8 pages406 KBONSEMI-NVH4L022N120M3S.pdf

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Order codes / Aliases

NVH4L022N120M3