Skip to main content

NVH4L012N065M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 12 mΩ封装 TO247

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247‐4L

Manufacturer: onsemi
Package: TO247
Datasheet: 11 pages · 442 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NVH4L012N065M3S Key Specifications

Source: manufacturer datasheet

RDS(on)	12 mΩ
封装	TO247

Technical Documents

1 document

Datasheet

NVH4L012N065M3S - Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247‐4L
11 pages442 KBONSEMI-NVH4L012N065M3S.pdf

Alternatives

0 parts

No alternatives listed for NVH4L012N065M3S yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from onsemi

NCP58920Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26
NCP58921Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26
NCP58922Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26
NCP58933ABTEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection
NCP58934ABLEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9
NCP58935ABT.revP1
NDC10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die
NDC25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die
NDSH10120CSilicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
NDSH20120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

Order codes / Aliases

NVH4L012N065M3